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BLF6G10LS-200
Power LDMOS transistor
Rev. 01 -- 18 January 2008 Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 869 to 894
VDS (V) 28
PL(AV) (W) 40
Gp (dB) 20
D (%) 27
ACPR (dBc) -41[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR = -41 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1
2 3
sym112
[1]
Connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLF6G10LS-200 Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 49 +150 225 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 40 W Typ Unit 0.34 K/W
BLF6G10LS-200_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
2 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.9 mA VDS = 10 V; ID = 270 mA VDS = 28 V; ID = 1620 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 9.45 A VGS = VGS(th) + 3.75 V; ID = 9.45 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 1.7 40 Typ 1.9 2.2 45 19 0.06 3.7 Max 2.4 2.7 5 450 Unit V V V A A nA S pF
7. Application information
Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol PL(AV) Gp RLin D ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W Conditions Min 18.5 24 Typ 40 20.2 -6.4 27 -41 Max 21.5 -4.5 -37 Unit W dB dB % dBc
7.1 Ruggedness in class-AB operation
The BLF6G10LS-200 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = 200 W; f = 894 MHz.
BLF6G10LS-200_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
3 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
7.2 One-tone CW
22 Gp (dB) 21 Gp 20 19 18 17 16 15 0 40 80 120 160 D 50 40 30 20 10 0 200 240 PL (W)
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70 D (%) 60
VDS = 28 V; IDq = 1400 mA; f = 894 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values
7.3 Two-tone CW
22 Gp (dB) Gp 20 D 40
001aah534
60 D (%)
18
20
16 0 50 100 150 200 250
0 300 350 PL(PEP) (W)
VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz; f2 = 894.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
BLF6G10LS-200_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
4 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
0 IMD (dBc) -20
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0 IMD3 (dBc)
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IMD3
-20
-40
IMD5
-40
IMD7 -60 -60
(5) (4) (1) (3) (2)
-80 0 50 100 150 200 250 300 350 PL(PEP) (W)
-80 0 50 100 150 200 250 300 350 PL(PEP) (W)
VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz; f2 = 894.05 MHz.
VDS = 28 V; f1 = 893.95 MHz; f2 = 894.05 MHz. (1) 1300 MHz (2) 1350 MHz (3) 1400 MHz (4) 1450 MHz (5) 1500 MHz
Fig 3. Two-tone CW intermodulation distortion as function of peak envelope load power; typical values
Fig 4. Third order intermodulation distortion as a function of peak envelope load power; typical values
7.4 2-carrier W-CDMA
22 Gp (dB) 21 Gp 20 30 -40 19 D 20 -60 18 10
001aah537
50 D (%) 40
0 ACPR (dBc) -20
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17 0 20 40 PL(AV) (W) 60
0
-80 0 10 20 30 40 50 60 70 PL(AV) (W)
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz; f2 = 891.5 MHz; carrier spacing 5 MHz.
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz; f2 = 891.5 MHz; carrier spacing 5 MHz.
Fig 5. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values
BLF6G10LS-200_1
Fig 6. 2-carrier W-CDMA adjacent channel power ratio as function of average load power; typical values
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
5 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
8. Test information
VGG
R3 C1 C6 C7 C3 C10 R1 L1
VDD
R2
C13
input 50
C2
C5
output 50
C14
C15
C20
C8
C9
C4
C11
C12
001aah539
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components.
Fig 7. Test circuit for operation at 800 MHz
C6 C7 R2 C1 C3 C10 Q3 L1 C13 R1 C18 R3
C5 C2 C14 C15 C19 C20
C4 C11 C8 C9
C12
NXP IN 800 -1000 MHz V1.0
NXP OUT 800 -1000 MHz V1.0
001aah540
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components.
Fig 8. Component layout
BLF6G10LS-200_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
6 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
Table 8. List of components (see Figure 7 and Figure 8) All capacitors should be soldered vertically except C20. Component C1, C2, C3, C4, C5 C6, C7, C8, C9 C10, C11 C12, C13 C14 C15 C18, C19 C20 L1 Q1 R1, R2, R3
[1] [2]
Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Ferrite SMD bead BLC6G10LS-160 SMD resistor
Value 68 pF 330 nF 4.7 F 220 F; 63 V 4.7 pF; 50 V 9.1 pF 10 pF 1.5 pF; 20 V 9.1 ; 0.1 W
[1] [1] [1] [1] [1] [2] [2]
Remarks
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
American Technical Ceramics type 100B or capacitor of same quality. TDK or capacitor of same quality.
BLF6G10LS-200_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
7 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 9. Package outline SOT502B
BLF6G10LS-200_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
8 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
10. Abbreviations
Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history Release date 20080118 Data sheet status Preliminary data sheet Change notice Supersedes Document ID BLF6G10LS-200_1
BLF6G10LS-200_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
9 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLF6G10LS-200_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 18 January 2008
10 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 18 January 2008 Document identifier: BLF6G10LS-200_1

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